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HIGH-VOLTAGE MONOLITHIC IC
ECN3064
ECN3064 is monolithic IC integrating 6 IGBTs. It can be applied to DC brushless motors and Induction motors. Functions * Integrated charge pump circuit * Free Wheeling Diodes are integrated * Overcurrent Protection circuit is integrated Features * PWM control of upper and bottom arm IGBTs are possible by controlling outer Microproc essor * 6 Logic inputs are compatible with 5V CMOS or LSTTL outputs * Upper and Bottom arm IGBTs can operate in 20kHz chopping frequency * For converted AC200 to 230 V power supplies
VCC(15V) D1 + C1 CCL VS1 VS2 VS
D2 C2 +CB VCC VB supply VB C+
C0
Charge Pump
UT VT WT Clock
Top Arm Driver
Motor
MU MV MW
Microprocessor
UB VB WB
Bottom Arm Driver
CLOCK
Pulse Generator
Latch
R S
+
Filter 1us
Vref 0.5V GH1 GH2
CR RTR CTR Vref
VTR
GL
RS
RS
Fig.1 Block Diagram
PDE-3064-0
ECN3064
1. (1) (2) (3) (4) 2. General Type Application Structure Package ECN3064SP, ECN3064SPV,ECN3064SPR 3-Phase DC Brushless Motor and Induction Motor Monolithic IC SP-23TA, SP-23TB, SP-23TR Maximum Allowable Ratings (Ta=25 C) Symbols Terminal VSM VS1,VS2 MU,MV,MW VCC VCC VIN UT,VT,WT, UB,VB,WB IMDC MU,MV,MW IMP MU,MV,MW IOM MU,MV,MW Tjop Tstg Ratings 500 18 -0.5~ VB+0.5 0.7 1.5 1.5 -20 ~ +125 -40 ~ +150 Unit V V V A A A C C Condition
No. Items 1 Output Device Breakdown Voltage 2 Supply Voltage 3 Input Voltage 4 5 6 7 8 Output Current Peak Output Current Output Current in Start Up and Accelerating Operating Junction Temperature Storage Temperature
Note 1 Note 1 Note 2
Note 1. Please note that aculmulated duty of a period exceeding 0.7A has to be less than 5% of total current flowing period. Note 2. Thermal Resistance Rj-c = 4 C /W Rj-a = 40 C /W 3. Recommended Operating Conditions Symbols Terminal VS VS1,VS2 VCC VCC MIN 50 13.5 TYP 325 15 MAX 400 16.5 Unit V V Condition
No. Items 1 Supply Voltage 2
Note 1. Recommended Safe Operating Area(SOA) It is recommended that this IC is used within the SOA as shown below where IM and VM are the current and the voltage at the terminal of motor wiring at the change of phase (turn off).
1.5 IM (A)
Safe Operating Area
0 VM(V)
400
PDE-3064-0
ECN3064
4. Electrical Characteristics (Ta=25 C) Unless otherwise specified, VCC=15V, VS=325V Suffix T; Top arm No. Items 1 Standby Current 2 3 Output device FVD 4 5 6 7 8 9 10 11 Input Voltage 12 13 Input Current Turn On Delay Time Turn Off Delay Time Diode FVD B; Bottom arm Terminal VS1,VS2 VCC MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW UT,VT,W T, UB,VB,W B UT,VT,W T, UB,VB,W B CB CB RS MIN 3.5 TYP 0.5 10 2.2 2.2 1.0 1.0 1.0 1.0 2.2 2.4 MAX 1.5 20 3.0 3.0 2.0 2.0 2.0 2.0 2.8 3.0 1.5 100 Unit mA mA V V s s s s V V V V A Input=5V Note 1
Pull Down Resistance
Symbols IS ICC VFT VFB TdONT TdONB TdOFFT TdOFFB VFDT VFDB VIH VIL IIH
Condition UT,VT,WT,UB,VB, WB=0V I=0.35A I=0.35A
I=0.35A Resistive Load
I=0.35A
14 VB Output Voltage 15 VB Output Current 16 Reference Voltage for Overcurrent 17 LVSD Output Voltage 18 LVSD recover Voltage 19 LVSD reset hysterisis
VB IB Vref
6.8 25 0.45 10.0 10.1 0.1
7.5 0.5 11.5 12.0 0.5
8.2 0.55 12.9 13.0 0.9
V mA V V V V
deltaVLoad=0.1V
LVSDON VCC,MU, LVSDOFF MV,MW Vrh
Note.2
Note 1. Pull Down Resistance are typically 200 k. Note 2. LVSD : Low Voltage Shut Down
PDE-3064-0
ECN3064
5. Function 5.1 Truth Table Terminal UT,VT,WT, UB,VB,WB UT,UB VT,VB WT,WB 5.2 Timing Chart Input L H UT&UB=H VT&VB=H WT&WB=H Output OFF ON OFF OFF OFF
UT Top Arm VT WT
UB Bottom Arm VB WB
MU Output MV Output MW Output
Example of DC Brushless motor drive 5.3 Overcurrent Limiting Operation
VB
This IC detects overcurrent by outside resistance Rs. When Rs input voltage exceeds inner reference voltage Vref(0.5V typical), this IC turns off the bottom output. After overcurrent detection, a reset operation is done at each inner clock signal period. In case of not using this function, please connect Rs terminal to GL terminal.
RS
typ 200k
typ 220k typ 5pF Vref S Latch R
typ 300
Inner Clock Trigger RS terminal inner equvalent circuit
PDE-3064-0
ECN3064
6. Standard Application Usage for inner power supply(VB). for charge pump For charge pump Remark stress voltage is VB stress voltage is VCC 600V/1.0A trr 100ns Component Recommended Value C0 More than 0.22 uF C1,C2 D1,D2 1.0 uF +/- 20% Hitachi DFG1C6(Glass mold type), DFM1F6 (Resin mold type) or considerable parts 1800 pF +/- 5% 22 k-ohm +/- 5%
CTR RTR
for clock for clock
Note 1. Note 1.
Note 1. Clock frequency is determined approximately by next equation. Floating capacitance of PCB must be considered. At Recommended Value of CR, the error factor of IC is about 10%. fclock = -1 / (2C*R*Ln(1-3.5/5.5)) ; Ln is natural logarithm = 0.494 / (C*R) (Hz)
VCC(15V)
D2 C2 + CB VB VB supply C+ C-
D1 + C1 CL VS1 VS2 VS
C0
VCC
Charge Pump
UT VT WT Clock
Top Arm Driver
Motor
MU MV MW
Microprocessor
UB VB WB
Bottom Arm Driver
Pulse Generator
CLOCK
Latch
R S
+
Filter 1s
Vref 0.5V
CR RTR CTR Vref
VTR
GL
RS
GH1
GH2
RS
PDE-3064-0
ECN3064
7. Terminal
23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
MV VS1 MU GH1 UT VT WT RS UB VB WB VTR CR CB CL CC+ GL VCC GH2 MW VS2
(Marking Side) Fig.2 Pin Assignment
8.
Package
Outline
ECN3064SP (SP-23TA)
ECN3064SPV (SP-23TB)
ECN3064 SPR (SP-23TR)
PDE-3064-0
ECN3064
9. Package Dimensions (1) ECN3064SP (SP-23TA) (Unit:mm)
(2) ECN3064SPV
(SP-23TB)
PDE-3064-0
ECN3064
(3) ECN3064SPR (SP-23TR)
31MAX (30) 28 20 0.5
0.2 0.3 0.2
3.5 0.3 3.6
0.2
1.26
0.24
14.7MAX
0.3
4.1
11.2
3.6 0.2
0.3
12.3 0.5
(9)
1
1.23 0.25 0.6 23.97 0.3 0.1
23
2.2 0.3
+10 0 -0
0.25 typ
(7.7)
4.9 0.5
1.27 0.5
2.54 0.5
2.54 0.5
7.1 0.5
+10 0 -0
1.8 typ
PDE-3064-0
HITACHI POWER SEMICONDUCTORS Notices
1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse

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